| 기판-Mask 재료에 따른 $beta$-SiC 박막 증착의 선택성과 특성 평가 |
| 양원재, 김성진1, 정용선2, 최덕균2, 전형탁2, 오근호2 |
한양대학교 세라믹공학과
1삼성종합기술원
2한양대학교 세라믹공정연구센터 |
| Selectivity and Characteristics of $beta$-SiC Thin Film Deposited on the Masked Substrate |
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| ABSTRACT |
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${beta}$-SiC thin film was deposited on a Si substrate without buffer layer using a single precursor of Hexamethyldisilane (Si2(CH3)6) by chemical vapor deposition method. HCI gas was introduced into hexamethyldisilane /H2 gas mixture, and the feeding schedule of HCI and precursor gases was modified in order to enhance the selectivity of SiC deposition between a Si substrate and a SiO2 mask. The effect of HCI gas on the surface roughness of the SiC film was investigated and typical electrical properties of the SiC film were also investigated by Hall measurement. |
| Key words:
${\beta}$-SiC film, Selectivity, Nucleation, Etching, Surface roughness, Electrical property |
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