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J. Korean Ceram. Soc. > Volume 50(6); 2013 > Article
Journal of the Korean Ceramic Society 2013;50(6): 551.
doi: https://doi.org/10.4191/kcers.2013.50.6.551
사파이어 기판에 펄스 레이저 증착법으로 성장된 AlN 박막의 특성
정은희, 정준기1, 정래영1, 김성진1, 박상엽1
강릉원주대학교 세라믹신소재공학과
1강릉원주대학교 파인세라믹기술혁신센타(FCRIC)
Characterization of AlN Thin Films Grown by Pulsed Laser Deposition on Sapphire Substrate
Eun-Hee Jeong, Jun-Ki Chung1, Rae-Young Jung1, Sung-Jin Kim1, Sang-Yeup Park1
Advanced Ceramic Materials Engineering, Gangnung-wonju National University
1Technology Innovation Center for Fine Ceramics, Gangnung-wonju National University
ABSTRACT
AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition and the films were characterized by changing the deposition conditions. In particular, we investigated the optimal conditions for the application of a heat sinking plane AlN thin film. Epitaxial AlN films were deposited on sapphire ($c-Al_2O_3$) single crystals by pulsed laser deposition (PLD) with an AlN target. AlN films were deposited at a fixed pressure of $2{times}10^{-5}$ Torr, while the substrate temperature was varied from 500 to $700^{circ}C$. According to the experimental results of the growth temperature of the thin film, AlN thin films were confirmed with a highly c-axis orientation, maximum grain size, and high thermal conductivity at $650^{circ}C$. The thermal conductivity of the AlN thin film was found to increase compared to bulk AlN near the band gap value of 6.2 eV.
Key words: AlN, Thin films, PLD, Thermal conductivity
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