Ferroelectric PLZT Thin Films Prepared by Sol-Gel Route

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J. Korean Ceram. Soc. > Volume 29(11); 1992 > Article

Journal of the Korean Ceramic Society 1992;29(11): 870.

졸-겔법에 의한 PLZT 합성과 강유전성 박막 제조

오영제, 김정기, 주기태, 현상훈¹, 정형진

한국과학기술연구원 재료연구단
¹연세대학교 세라믹공학과

Ferroelectric PLZT Thin Films Prepared by Sol-Gel Route

ABSTRACT

Lead lanthanum zirconate titanate (PLZT, 6/65/35) powders, crack-free and dense thin films have been prepared by polymeric sol-gel process. Pyrolysis of the gel, crystallization and optical transmittance behavior of the PLZT thin film onto sapphire substrate have been studied. Esterification occurs during synthesis of PLZT complexation. Crystalline Pb phase was transiently formed near 450$^{circ}C$. Content of perovskite phase in the films were increased with increasing thickness of film, but the kinetics of formation of perovskite phase in films was slower than that of powders. Transmittance of the films was decreased with increasing the temperature of heat treatment. Ferroelectric hysteresis loop measurements indicated increments of remanent polarization and coercive field for plenty more of perovskite phase.