| 졸-겔 공정에 의한 YMnO3 박막의 전기적 특성 |
| 김응수, 김병규, 김유택 |
| 경기대학교 재료공학과 |
| Electrical Properties of YMnO3 Thin Film by Sol-gel Process |
| Eung Soo Kim, Beng-Gu Kim, Yoo-Taek Kim |
| Department of Materials Engineering, Kyonggi University |
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| ABSTRACT |
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Hexagonal $YMnO_3$ thin films were prepared from $Y(NO_3)_3{cdot}5H_2O$ and $Mn(CH_3CO_2)_2{cdot}4H_2O$ as starting materials on the Si(100) substrates by the sol-gel method. The crystal structure and the electrical properties of the $YMnO_3$ thin films were investigated as a function of heat treatment temperature, the amount of water(Rw) of hydrolysis and the addition of catalysis. The crystallization of the $YMnO_3$ thin film began at 700${circ}C$ and completed at 800${circ}C$ for 1 h. The c-axis (0001) preferred orientation of hexagonal $YMnO_3$ was detected for the $YMnO_3$ thin films with Rw=6 and that was decreased for the $YMnO_3$ thin films with Rw=1 and Rw=12. The crystallinity and preferred orientation of the $YMnO_3$ thin films were depended on the addition of acid and/or alkali catalysis, which, in turn, the preferred orientation of c-axis was decreased and the orthorhombic phase of $YMnO_3$ was detected to the specimens with the addition of catalysis. The $YMnO_3$ thin film with Rw=6 showed good leakage current density of $1.2{times}10-8 A/cm^2$ at the applied voltage of 0.2V and the leakage current density was not changed drastically with applied voltage. |
| Key words:
Sol-gel method, Hexagonal $YMnO_3$, Orthorhombic $YMnO_3$ Preferred orientation, Rw ratio |
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