| Trends in defect passivation technologies for perovskite-based photosensor |
Jun‑Hee Park1,2, Hong‑Rae Kim1,2,3, Min‑Jung Kang4, Dong Hee Son2, Jae‑Chul Pyun1
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1Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-Ro, Seodaemun-Gu, Seoul, 03722, South Korea
2Department of Chemistry, Texas A&M University, College Station, TX, 77843, USA
3Printing Device Research Team, Samsung Display Co., Ltd., Yongin-si, 17113, South Korea
4Korea Institute of Science and Technology (KIST), Seoul, South Korea |
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Received: October 24, 2023; Revised: November 2, 2023 Accepted: November 8, 2023. Published online: December 6, 2023. |
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| ABSTRACT |
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Perovskites are semiconductor materials with the ABX3 structure, and they possess several attractive features, such as a tunable bandgap, high photoluminescence quantum yield (PLQY), charge mobility, and carrier lifetime. Hence, they are widely used in various applications, such as light-emitting devices, solar cells, and photosensors. However, the perovskite defects, including grain boundaries, vacancies, ion migration, and structural deformation, interfere with the effective performance of the perovskite-based devices. The intrinsic instability and trap states caused by the perovskite defects decrease the stability and performance of perovskite-based devices. Two methods of defect passivation are carried out to enhance the effectiveness of perovskite-based devices: (1) polymers and (2) chemical additives. Defect passivation protects the surface to increase stability and reduce trap states, thereby enhancing the performance of perovskite-based devices. This article reviews the technologies for defect passivation in perovskite-based devices. The effect of defect passivation has been analyzed using various methodologies: (1) surface analysis using atomic force microscopy (AFM) and scanning electron microscopy (SEM), (2) bandgap and charge carrier lifetime analysis using photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra, (3) the trap-state density calculations based on the I–V curve under dark conditions, and (4) comparison of the critical parameters of the perovskite-based devices. This review provides an overview of the defect passivation technologies available to enhance the stability and applicability of perovskite-based photosensors. |
| Key words:
Perovskite · Photosensor · Passivation · Defects · Grain boundaries · Vacancies · Ion migration |
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