| Boron 첨가량이 평면광회로용 실리카 박막의 UV 감광성에 미치는 영향 |
| 권기열, 조승현, 신동욱, 송국현1, 이낙규2, 나경환2 |
한양대학교 세라믹공학과
1산업자원부 기술표준원 디지털표준과
2한국생산기술연구원 생산기술센터 |
| Effect of Boron Concentration on the UV Photosensitivity of Silica Glass Film for Planar Lightwave Circuit |
| Kwon Ki Youl , Cho Seung-Hyun , Shin Dong Wook , Song Kug-Hyun 1, Lee Nak Kyu 2, Na Kyoung Hwan 2 |
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| ABSTRACT |
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In this study, photosensitivity dynamics in SiO$_2$ glass with the composition similar to that of silica Planar Lightwave Circuit (PLC) devices was investigated as a fundamental study prior to the device fabrication. Silica bulk glasses with similar composition to the core layer of PLC devices were prepared with variable composition of B$_2$O$_3$. The photosensitivity in boron and germanium co-doped SiO$_2$ glass yields refractive index change $Delta$n as high as 10$^$-3/. However such index modulation disappeared after annealing. From the result of annealing experiment and W absorption / Raman spectra, we conclude the compaction model is applicable to our glass system. |
| Key words:
Silica glass, Photosensitivity, Bragg grating, PLC, Boron codoping |
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