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J. Korean Ceram. Soc. > Volume 40(12); 2003 > Article
Journal of the Korean Ceramic Society 2003;40(12): 1189.
doi: https://doi.org/10.4191/kcers.2003.40.12.1189
Sol-gel법으로 제조한 강유전성 Bi3.25La0.75Ti3O12박막의 급속열처리에 따른 전기적 특성에 관한 연구
이인재, 김병호
고려대학교 재료공학과
A Study on Electrical Properties of Sol-gel Derived Bi3.25La0.75Ti3O12 Thin Films by Rapid Thermal Annealing
Ferroelectric B $i_{3.25}$L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) solution was synthesized by sol-gel process. BLT thin films were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. In this experiments, Bi(TMHD)$_3$, La(III)2-Methoxyethoxide, and Ti(IV) i-propoxide were used as starting materials, which were dissolved in 2-Methoxyethanol. Rapid Thermal Annealing (RTA) was used to promote crystallization of BLT thin films. The thin films with RTA process were compared with those with non-RTA process on electrical properties. After RTA process, the remanent polarization value (2Pr) of BLT thin films annealed at 72$0^{circ}C$ was 20.46 $mu$C/$textrm{cm}^2$ which was approximately 27% higher than that of non-RTA process at 5 V.5 V.
Key words: Sol-gel process, RTA, BLT thin film, Ferroelectric
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