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J. Korean Ceram. Soc. > Volume 35(11); 1998 > Article
Journal of the Korean Ceramic Society 1998;35(11): 1141.
기판 조건에 따른 TiSi$_2$박막의 형성 및 전기적 특성 변화 고찰
김은하, 고대홍
연세대학교 세라믹공학과
Effects of Conditions of Silicon Substrates on The Formation and Electrical Properties of TiSi$_2$ Thin Films
Formations of TiSi2 thin films by a solid state reaction between Ti thin films and Si substrates and the effects of the conditions of Si substrates have been investigated. Low-resistant C54-TiSi2 films were formed by rapid thermal processes at 75$0^{circ}C$ on the undoped Si(100) substrate and at 80$0^{circ}C$ on the As or B-doped si (100) substrates as well as on As or B-doped poly-Si substrates. Cross-sectional TEM analyses confirmed the formation of small-grained C49 TiSi2 films by rapid thermal processes at $700^{circ}C$ on pre-amorphized poly-Si substrate by As implantation. The temperatures of the transformation to the C54 phase decreased in small-grained C49-TiSi2 films
Key words: TiSi$_2$, C49-to-C54 transformation, Pre=-amorphization
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