A Study on the Dielectric Properties of (BaBi<TEX>$_{0.5}$</TEX>Sr<TEX>$_{0.5}$</TEX>)TiO<TEX>$_3$</TEX> Thin Films Diffused with PbO-Bi<TEX>$_2$</TEX>O<TEX>$_3$</TEX>-B<TEX>$_2$</TEX>O<TEX>$_3$</TEX> Layer

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J. Korean Ceram. Soc. > Volume 35(9); 1998 > Article

Journal of the Korean Ceramic Society 1998;35(9): 895.

PbO-Bi$_2$O$_3$-B$_2$O$_3$ 확산시킨 (BaBi$_{0.5}$Sr$_{0.5}$)TiO$_3$ 박막의 유전물성에 관한 연구

김진철, 진병태¹, 박원모, 남산, 김명호¹, 변재동

고려대하교 재료공학과
¹창원대학교 세라믹공학과

A Study on the Dielectric Properties of (BaBi$_{0.5}$Sr$_{0.5}$)TiO$_3$ Thin Films Diffused with PbO-Bi$_2$O$_3$-B$_2$O$_3$ Layer

ABSTRACT

The amorphous PbO-{{{{ { {Bi }_{2 }O }_{3 } }}-{{{{ { { B}_{2 }O }_{3 } }}(PBB) layer was deposited on the ({{{{ { {Ba }_{0.5 }Sr }_{0.5 } }})TiO3 (BST) film using r. f mag-netron sputtering and diffused throughout the film after the annealing at $650^{circ}C$ The effect of PBB phase on the dielectric properties of the BST film was investigated. The PBB phae in BST film was identified by an energy dispersive spectroscopy (EDS). Dielectric properties of BST film were significantly improved after the diffusion of the PBB. The leakage current density of the BST films was 9.9$times${{{{ {10 }^{-6 } }}A/cm2 and BSt film with PBB was 1.0-3.3$times$10-7A/cm2 at 1.25V and the dielectric constant of BST film with PBB was in-cerased to 533 at zero voltage. From these I-V and C-V characteristics the formation of insulating metal ox-ide in the ferroelectric thin film also improved the dielectric properties of the film,

Key words: BST thin film, RF magnetron sputtering, Diffusion, Dielectric property, GBBL