A High-Resolution Transmission Electron Microscopy Study on the Lattice Defects Formed in the High Energy P Ion Implanted Silicon

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J. Korean Ceram. Soc. > Volume 32(12); 1995 > Article

Journal of the Korean Ceramic Society 1995;32(12): 1377.

고에너지 P이온 주입한 실리콘에 형성된 격자 결함에 관한 고분해능 투과전자현미경 연구

장기완, 이정용, 조남훈¹, 노재상¹

한국과학기술원 재료공학과
¹홍익대학교 금속재료공학과

A High-Resolution Transmission Electron Microscopy Study on the Lattice Defects Formed in the High Energy P Ion Implanted Silicon

ABSTRACT

A high-resolution transmission electron microscopy study on the lattice defects formed in the high energy P ion implanted silicon was carried out on an atomic level. Results show that Lomer dislocations, 60$^{circ}$perfect dislocations, 60$^{circ}$ dislocation dipole and extrinsic stacking fault formed in the near Rp of as-implanted specimen. In the annelaed specimens, interstitial Frank loops, 60$^{circ}$perfect disolations, 60$^{circ}$dislocation dipoles, stacking faults, precipitates, perfect dislocation loops and <112> rodlike defects existed exclusively near in the Rp with various annealing temperature and time. From these results, it is concluded that extended secondary defects as well as the point defect clusters could be formed without annealing. Even at low temperature annealing such as 55$0^{circ}C$, small interstitial Frank loops could be formed and precipitates were also formed by $700^{circ}C$ annealing. The defect band annealed at 100$0^{circ}C$ for 1 hr could be divided into two regions depending on the distribution of the secondary defects.

Key words: High energy ion implantation, HRTEM, Lattice defects