| Furnace로 $N_2O$ 분위기에서 성장시킨 Oxynitride 절연막 특성 |
| 이은구, 박인길1, 박진성 |
조선대학교 재료공학과
1한국과학기술원 전자세라믹재료 연구센터 |
| Characteristics of Oxynitride Dielectics Prepared in $N_2O$ Ambient by Furnace |
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| ABSTRACT |
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(100) Si was oxidized in N2O ambient, and the film properties of oxynitride dielectrics were compared with pure SiO2. The growth rate, after pre-oxidation in O2/N2 ambient with raising temperature, is faster than that of O2/N2O treatment during the same condition. Nitrogen piles up at the interface of SiO2 and Si substrate and the content is about 2atom%. Comparing with pure SiO2, oxynitride dielectrics shows less dielectric breakdown failures and flat-band voltage shift, and good diffusion barrier property to dopant(BF2) is also observed. |
| Key words:
Oxynitride, Furnace, Oxidation, Thin oxide, Dielectric breakdown |
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