| Halide perovskites for next generation electronics integrating resistive switching memory and gas sensing |
| Hyojung Kim |
| Department of Semiconductor Systems Engineering, Sejong University, Seoul, 05006, Republic of Korea |
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Received: April 12, 2025; Revised: May 25, 2025 Accepted: June 27, 2025. Published online: July 17, 2025. |
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| ABSTRACT |
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The information age has heightened demand for next-generation devices, emphasizing performance and fabrication, which also require higher density, data processing, power efficiency, adaptability, multifunctionality, scalability, cost-effectiveness, and fabrication. Next-generation active materials, including metal oxide semiconductors, organic semiconductors, and 2D materials, are required because silicon-based devices cannot fulfill those demands. However, these technologies have facilitated advancements, and their benefits and drawbacks remain balanced. Novel photovoltaic materials gain significant attention as renewable energy sources expand to improve overall device efficiency and sustainability. Halide perovskites are investigated for their electrical properties, cost-effective production, and solution-based processing, featuring a tunable bandgap that enables swift ion transport and alters the main carriers. At the same time, they also exhibit broad absorption, elevated coefficients, more extended electron diffusion, and substantial charge carrier mobility. Such perovskites can be tailored through component replacement and defect engineering, and these compounds support various technologies, including photovoltaics, LEDs, transistors, resistive switching memory, gas sensors, and X-ray detectors. At the same time, ongoing research will explore uses, making insight into their electrical and structural characteristics essential. Memristor-based semiconductor gas sensors have gained prominence, as their resistive switching and memory capabilities transform these devices into “gasistors.” This investigation explores the properties of perovskites in gas sensors and resistive switching memory systems, where such attributes enhance device performance and have prompted significant studies. In contrast, perovskite systems will assist industry efforts to develop gasistors. |
| Key words:
Halide perovskite · Resistive switching memory · Gas sensor · Ion migration · Carrier mobility |
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