| Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films |
| Eunmi Lee1, Jong Yeog Son2 |
1Department of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea
2Department of Applied Physics and Institute of Natural Sciences, College of Applied Science, Kyung Hee University, Suwon, 446701, Republic of Korea |
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Received: November 20, 2023; Revised: February 4, 2024 Accepted: February 11, 2024. Published online: March 22, 2024. |
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| ABSTRACT |
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Resistive random access memory (RRAM) technology is receiving a lot of attention as one of the next-generation nonvolatile memory technologies with a simple device structure and fast operation speed. However, one of the problems that must be solved in RRAM technology is that the distribution of RRAM driving voltages of formation, SET, and RESET voltages is large. In this study, we investigated the RRAM driving voltage of formation, SET, and RESET voltages for Pt/NiO/Pt, Pt/NiO0.95/NiO/NiO0.95/Pt, and Pt/NiO0.95/Pt RRAM capacitors affected by an oxygen-deficient NiO0.95 layer. X-ray diffraction experiments confirmed that the NiO thin films exhibited reduced grain and worsened crystallinity as the oxygen vacancy concentration increased. In particular, increasing the oxygen vacancy concentration of the NiO thin films reduces the magnitude and the distribution of RRAM operating voltages of formation, SET, and RESET voltages. The decrease in RRAM operating voltages is due to the reduced Schottky barrier due to the increased oxygen vacancy concentration and the formation of a readily conducting filament due to the increased internal oxygen bonding. Additionally, it has been suggested that the reduced distribution of RRAM operating voltages is influenced by the formation volume of the conducting filament formed by increasing oxygen vacancy concentration. |
| Key words:
Oxygen-deficient NiO0.95 layer · Resistive switching characteristics · Forming, SET, and RESET voltage distribution |
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