| Thermoelectric properties of Mn-doped ZnSbs fabricated without sintering process |
| Zheng Dao Jin1, Ji Hee Pi2, Okmin Park3, Kyu Hyoung Lee2, Sang-il Kim3, Hee Jung Park1 |
1Department of Materials Science and Engineering, Dankook University, Cheonan 31116, Republic of Korea
2Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
3Department of Materials Science and Engineering, University of Seoul, Seoul 02504, Republic of Korea |
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Received: November 4, 2023; Revised: January 12, 2024 Accepted: January 28, 2024. Published online: March 4, 2024. |
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| ABSTRACT |
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ZnSb, a promising thermoelectric material, has traditionally been fabricated using a high-temperature sintering process. In the present study, we developed a compaction technology that eliminates the need for sintering, aiming to establish a more efficient fabrication for the ZnSb-based bulks. The thermoelectric properties of Mn-doped ZnSb samples (Zn1-xMnxSb, x = 0, 0.0025, 0.0050, 0.0075, 0.010) fabricated by the compaction technology were evaluated through their electronic and thermal transport properties over a temperature range of 50 to 200 °C. Both pristine ZnSb and Mn-doped ZnSbs exhibited p-type conduction behavior. The electrical conductivity of ZnSb was significantly enhanced by doping of 0.75 at% Mn at Zn-site mainly due to the improved carrier mobility, which leads to large power factor enhancement to 0.089 mW/mK2 for 0.75 at% Mn-doped ZnSb. Consequently, more than 300% enhancement in the dimensionless figure-of-merit (zT) with a peak zT value of 0.08 was achieved in 0.75 at% Mn-doped ZnSb at 473 K. |
| Key words:
Thermoelectric materials · Zinc antimony · Mn-doping · Without sintering |
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