| Effect of nitride addition on the electrical and thermal properties of pressureless solid-state sintered SiC ceramics |
| Rohit Malik, Young-Wook Kim |
| Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul 02504, Republic of Korea |
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Received: November 10, 2021; Revised: January 3, 2022 Accepted: January 13, 2022. Published online: February 17, 2022. |
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| ABSTRACT |
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SiC-0–8wt% Si3N4 and SiC-0–10 wt% TiN ceramics were fabricated via pressureless solid-state sintering using B4C and C as sintering aids. Si3N4 and TiN addition up to 4 and 1 wt%, respectively exhibited > 97% relative density. Thermal decomposition of nitrides and subsequent N2 evolution during sintering resulted in the low relative densities at the high levels of nitride content. This study demonstrated that 0.5–1 wt% nitride addition led to three orders of magnitude increase (105 → 108 cm−3) in carrier density due to nitride-derived N-doping in SiC lattice and, consequently an order of magnitude decrease (107 → 106 Ω∙cm) in the electrical resistivity. An increased thermal resistance at SiC-nitride heterogeneous grain boundaries was responsible for ~ 32% decrease in thermal conductivity with 1 wt% nitride addition. |
| Key words:
SiC · Pressureless solid-state sintering · Electrical properties · Thermal properties |
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