| Properties of IZTO Thin Films on Glass with Different Thickness of SiO2 Buffer Layer |
| Jong-Chan Park, Seong-Jun Kang1, Yung-Sup Yoon |
Department of Electronic Engineering, Inha University
1Department of Elcetrical and Semiconductor Engineering, Chonnam National University |
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| ABSTRACT |
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The properties of the IZTO thin films on the glass were studied with a variation of the $SiO_2$ buffer layer thickness. $SiO_2$ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the $SiO_2$ buffer layer are shown to be amorphous. Optimum $SiO_2$ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 nm with a sheet resistance of $25.32{Omega}/sq$ and the average transmittance is 82.51% in the visible region, at a $SiO_2$ buffer layer thickness of 40 nm. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the $SiO_2$ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices. |
| Key words:
IZTO, Transparent conductive oxide, $SiO_2$ buffer layer, Thin film |
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