| Properties of IZTO Thin Films Deposited on PEN Substrates with Different Working Pressures |
| Jong-Chan Park, Seong-Jun Kang1, Yung-Sup Yoon |
Department of Electronic Engineering, Inha University
1Department of Electrical and Semiconductor Engineering, Chonnam National University |
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| ABSTRACT |
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In this work, the properties of Indium-Zinc-Tin-Oxide (IZTO) thin films, deposited on polyethylene naphthalate (PEN) with a $SiO_2$ buffer layer, were analyzed with different working pressures. After depositing the $SiO_2$ buffer layer on PEN substrates by plasma-enhanced chemical vapor deposition (PECVD), the IZTO thin films were deposited by RF magnetron sputtering with 1 to 7-mTorr working pressure. All the IZTO thin films show an amorphous structure, regardless of the working pressure. The best morphological, electrical, and optical properties are obtained at 3-mTorr working pressure, with a surface roughness of 2.112-nm, a sheet resistance of $8.87-{Omega}/sq$, and a transmittance at 550-nm of 88.44%. These results indicate that IZTO thin films deposited on PEN have outstanding electrical and optical properties, and the PEN plastic substrate is a suitable material for display devices. |
| Key words:
IZTO, Transparent conductive oxide, $SiO_2$ buffer layer, Thin film |
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