| Properties of IZTO Thin Films Deposited on PET Substrates with The SiO2 Buffer Layer |
| Jong-Chan Park, Seong-Jun Kang1, Dong-Hoon Chang2, Yung-Sup Yoon |
Department of Electronic Engineering, Inha University
1Department of Electric and Semiconductor Engineering, Cheonnam University
2Department of Information & Communication Engineering, Inha University |
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| ABSTRACT |
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150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick $SiO_2$ buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/$SiO_2$/PET films were analyzed with respect to the thickness of the $SiO_2$ buffer layer. The mechanical properties were outstanding at a $SiO_2$ thickness of 50 nm, with a resistivity of $1.45{times}10^{-3}{Omega}-cm$, carrier concentration of $8.84{times}10^{20}/cm^3$, hall mobility of $4.88cm^2/Vs$, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the $SiO_2$ thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices. |
| Key words:
IZTO, Sputtering, Transparent conductive oxide, $SiO_2$ buffer layer, Thin film |
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