| SiC 증착층 계면의 표면조도에 미치는 흑연 기판의 표면조도 영향 |
| 박지연, 정명훈, 김대종, 김원주 |
| 한국원자력연구원 원자력재료개발부 |
| Effects of the Surface Roughness of a Graphite Substrate on the Interlayer Surface Roughness of Deposited SiC Layer |
| Ji Yeon Park, Myung Hoon Jeong, Daejong Kim, Weon-Ju Kim |
| Nuclear Materials Division, Korea Atomic Energy Research Institute |
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| ABSTRACT |
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The surface roughness of the inner and outer surfaces of a tube is an important requirement for nuclear fuel cladding. When an inner SiC clad tube, which is considered as an advanced Pressurized Water Cooled Reactor (PWR) clad with a three-layered structure, is fabricated by Chemical Vapor Deposition (CVD), the surface roughness of the substrate, graphite, is an important process parameter. The surface character of the graphite substrate could directly affect the roughness of the inner surface of SiC deposits, which is in contact with a substrate. To evaluate the effects of the surface roughness changes of a substrate, SiC deposits were fabricated using different types of graphite substrates prepared by the following four polishing paths and heat-treatment for purification: (1) polishing with #220 abrasive paper (PP) without heat treatment (HT), (2) polishing with #220 PP with HT, (3) #2400 PP without HT, (4) polishing with #2400 PP with HT. The average surface roughnesses (Ra) of each deposited SiC layer are 4.273, 6.599, 3.069, and $6.401{mu}m$, respectively. In the low pressure SiC CVD process with a graphite substrate, the removal of graphite particles on the graphite surface during the purification and the temperature increasing process for CVD seemed to affect the surface roughness of SiC deposits. For the lower surface roughness of the as-deposited interlayer of SiC on the graphite substrate, the fine controlled processing with the completed removal of rough scratches and cleaning at each polishing and heat treating step was important. |
| Key words:
SiC, Chemical vapor deposition, Graphite substrate, Surface roughness, Heat treatment, Polishing |
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