| 스퍼터링에 의한 펄스파워 캐패시터용 TiO2 박막의 제조 및 전기적특성 |
| 박상식 |
| 경북대학교 나노소재공학부 |
| Preparation and Electrical Properties of TiO2 Films Prepared by Sputtering for a Pulse Power Capacitor |
| Sang-Shik Park |
| School of Nano-Materials Engineering, Kyungpook National University |
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| ABSTRACT |
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$TiO_2$ thin films for a pulse power capacitor were deposited by RF magnetron sputtering. The effects of the deposition gas ratio and thickness on the crystallization and electrical properties of the $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on Si substrates at room temperature changed to the anatase from the rutile phase with an increase in the oxygen partial pressure. Also, the crystallinity of the $TiO_2$ films was enhanced with an increase in the thickness of the films. However, $TiO_2$ films deposited on a PET substrate showed an amorphous structure, unlike those deposited on a Si substrate. An X-ray photoelectron spectroscopy(XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of the $TiO_2$ films as a function of the frequency was significantly changed with the thickness of the films. The films showed a dielectric constant of 100~110 at 1 kHz. However, the dissipation factors of the films were relatively high. Films with a thickness of about 1000nm showed a breakdown strength that exceeded 1000 kV/cm. |
| Key words:
Pulse power capacitor, $TiO_2$, Breakdown strength, R.f. sputtering, Dielectric constant |
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