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J. Korean Ceram. Soc. > Volume 49(4); 2012 > Article
Journal of the Korean Ceramic Society 2012;49(4): 333.
doi: https://doi.org/10.4191/kcers.2012.49.4.333
Development of CNT-dispersed Si3N4 Ceramics by Adding Lower Temperature Sintering Aids
Mitsuaki Matsuoka, Sara Yoshio, Junichi Tatami, Toru Wakihara, Katsutoshi Komeya, Takeshi Meguro
Graduate School of Environment and Information Sciences, Yokohama National University
The study to give electrical conductivity by dispersing carbon nanotubes (CNT) into silicon nitride ($Si_3N_4$) ceramics has been carried out in recent years. However, the density and the strength of $Si_3N_4$ ceramics were degraded and CNTs disappeared after firing at high temperatures because CNTs prevent $Si_3N_4$ from densification and there is a possibility that CNTs react with $Si_3N_4$ or $SiO_2$. In order to suppress the reaction and the disappearance of CNTs, lower temperature densification is needed. In this study, $HfO_2$ and $TiO_2$ was added to $Si_3N_4-Y_2O_3-Al_2O_3$-AlN system to fabricate CNT-dispersed $Si_3N_4$ ceramics at lower temperatures. $HfO_2$ promotes the densification of $Si_3N_4$ and prevents CNT from disappearance. As a result, the sample by adding $HfO_2$ and $TiO_2$ fired at lower temperatures showed higher electrical conductivity and higher bending strength. It was also shown that the mechanical and electrical properties depended on the quantity of the added CNTs.
Key words: Silicon nitride, Carbon nanotube, Hafnium oxide, Titanium oxide, Electrical conductivity
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