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J. Korean Ceram. Soc. > Volume 48(5); 2011 > Article
Journal of the Korean Ceramic Society 2011;48(5): 342.
doi: https://doi.org/10.4191/kcers.2011.48.5.342
비대칭 펄스 DC 반응성 마그네트론 스퍼터링으로 증착된 나노결정질 TiN 박막의 성장거동
한만근, 전성용
목포대학교 신소재공학과
Growing Behavior of Nanocrystalline TiN Films by Asymmetric Pulsed DC Reactive Magnetron Sputtering
Man-Geun Han, Sung-Yong Chun
Department of Advanced Materials Science and Engineering, Mokpo National University
Nanocrystalline TiN films were deposited on Si(100) substrate using asymmetric pulsed DC reactive magnetron sputtering. We investigated the growing behavior and the structural properties of TiN films with change of duty cycle and pulsed frequency. Grain size of TiN films were decreased from 87.2 nm to 9.8 nm with decrease of duty cycle. The $2{theta}$ values for (111) and (200) crystallographic planes of the TiN films were also decreased with decrease of duty cycle. This shift in $2{theta}$ could be attributed to compressive stress in the TiN coatings. Thus, the change of plasma parameter has a strong influence not only on the microstructure but also on the residual stresses of TiN films.
Key words: Pulsed sputtering, Asymmetric bipolar, Duty cycle, Pulse frequency
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