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J. Korean Ceram. Soc. > Volume 48(4); 2011 > Article
Journal of the Korean Ceramic Society 2011;48(4): 316.
doi: https://doi.org/10.4191/kcers.2011.48.4.316
RF Sputtering법에 의한 산화주석 박막의 진공 열처리 효과
김선필, 김영래1, 김성동, 김사라은경2
서울과학기술대학교 기계설계자동화공학부
1서울테크노파크 MSP 기술지원센터
2서울과학기술대학교 NID융합기술대학원
The Effect of Vacuum Annealing of Tin Oxide Thin Films Obtained by RF Sputtering
Sun-Phil Kim, Young-Rae Kim1, Sung-Dong Kim, Sarah Eun-Kyung Kim2
School of Mechanical Design and Automation Engineering, Seoul National University of Science and Technology
1Microsystem Packaging Center, Seoul Technopark
2Graduate School of NID Fusion Technology, Seoul National University of Science and Technology
Tin oxide thin films were deposited by rf reactive sputtering and annealed at $400^{circ}C$ for 1 h in vacuum. To minimize the influence such as reduction, oxidation, and doping on tin oxide thin films during annealing, a vacuum ambient annealing was adopted. The structural, optical, and electrical properties of tin oxide thin films were characterized by X-ray diffraction, atomic force microscope, UV-Vis spectrometer, and Hall effect measurements. After vacuum annealing, the grain size of all thin films was slightly increased and the roughness ($R_a$) was improved, however irregular and coalesced shapes were observed from the most of the films. These irregular and coalesced crystal shapes and the possible elimination of intrinsic defects might have caused a decrease in both carrier concentration and mobility, which degrades electrical conductivity.
Key words: Thin films, Annealing, Conductivity, Tin compounds
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