| PRAM 기록막용 Sb2Te3 박막의 질소 첨가에 대한 영향 |
| 배준현, 차준호, 김경호, 김병근, 이홍림, Dae-Seop Byeon1 |
| 연세대학교 신소재공학과 |
| The Effect of N2 Gas Doping on Sb2Te3Thin Film for PRAM Recording Layer |
| Jun-Hyun Bae, Jun-Ho Cha, Kyoung-Ho Kim, Byung-Geun Kim, Hong-Lim Lee, Dae-Seop Byeon1 |
School of Advanced Materials Science and Engineering, Yonsei University
1School of Advanced Materials Science and Engineering, Yonsei University |
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| ABSTRACT |
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In this research, properties of $N_2$-doped $Sb_2Te_3$ thin film were evaluated using 4-point probe, XRD and AFM. $Sb_2Te_3$ material has faster crystallization rate than $Ge_2Sb_2Te_5$, but sheet resistance difference between amorphous and crystallization state is very low. This low sheet resistance difference decreases sensing margin in reading operation at PRAM device operation. Therefore, in order to overcome this weak point, $N_2$ gas was doped on $Sb_2Te_3$ thin film. Sheet resistance difference between amorphous and crystallized state of $N_2$-doped $Sb_2Te_3$ thin film showed about $10^4$ times higher than Un-doped $Sb_2Te_3$ thin film because of the grain boundary scattering. |
| Key words:
Phase change, PRAM$Sb_3Te_3$, Nitrogen, Resistance |
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