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J. Korean Ceram. Soc. > Volume 45(1); 2008 > Article
Journal of the Korean Ceramic Society 2008;45(1): 69.
doi: https://doi.org/10.4191/kcers.2008.45.1.069
SiO2 첨가가 AIN 세라믹스의 고온 비저항에 미치는 영향
이원진, 김형태1, 이성민1
(주)코미코
1요업(세라믹)기술원 이천분원 구조세라믹부
Effects of SiO2 on the High Temperature Resistivities of AIN Ceramics
Won-Jin Lee, Hyung-Tae Kim1, Sung-Min Lee1
Komico Ltd.
1Korea Institute of Ceramic Engineering and Technology(Icheon)
ABSTRACT
The effects of $SiO_2$ impurity on the high temperature resistivities of AIN ceramics have been investigated. When $SiO_2$ was added into 1 wt% $Y_2O_3$-doped AIN, DC resistivities have decreased and electrode polarizations disappeared. Impedance spectroscopy showed two semi-circles at $600^{circ}C$, which were attributed to grain and grain boundary, respectively. $SiO_2$ doping had more significant effects on the grain resistivity than grain boundary resistivity, implying that doped Si acted as a donor in AIN lattice. In addition, voltage dependency of DC resistivity was observed, which might be related to dependency of size of grain boundary semi-circle on the bias voltage in impedance spectroscopy.
Key words: Aluminum nitride, Resistivity, $SiO_2$ impurity
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