| SiO2 첨가가 AIN 세라믹스의 고온 비저항에 미치는 영향 |
| 이원진, 김형태1, 이성민1 |
(주)코미코
1요업(세라믹)기술원 이천분원 구조세라믹부 |
| Effects of SiO2 on the High Temperature Resistivities of AIN Ceramics |
| Won-Jin Lee, Hyung-Tae Kim1, Sung-Min Lee1 |
Komico Ltd.
1Korea Institute of Ceramic Engineering and Technology(Icheon) |
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| ABSTRACT |
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The effects of $SiO_2$ impurity on the high temperature resistivities of AIN ceramics have been investigated. When $SiO_2$ was added into 1 wt% $Y_2O_3$-doped AIN, DC resistivities have decreased and electrode polarizations disappeared. Impedance spectroscopy showed two semi-circles at $600^{circ}C$, which were attributed to grain and grain boundary, respectively. $SiO_2$ doping had more significant effects on the grain resistivity than grain boundary resistivity, implying that doped Si acted as a donor in AIN lattice. In addition, voltage dependency of DC resistivity was observed, which might be related to dependency of size of grain boundary semi-circle on the bias voltage in impedance spectroscopy. |
| Key words:
Aluminum nitride, Resistivity, $SiO_2$ impurity |
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