| 화학기상반응으로 흑연 위에 만든 SiC 반응층의 모양에 미치는 보론 카바이드의 영향 |
| 홍현정, 류도형, 조광연, 공은배, 신동근, 신대규1, 이재성2 |
요업기술원 나노소재팀
1하이닉스 반도체
2한양대학교 금속재료공학과 |
| Effect of Boron Carbide on the Morphology of SiC Conversion Layer of Graphite Substrate formed by Chemical Vapor Reaction |
| Hyun-Jung Hong, Doh-Hyung Riu, Kwang-Youn Cho, Eun-Bae Kong, Dong-Geun Shin, Dae-Kyu Shin1, Jae-Sung Lee2 |
Nano Materials Team, KICET(Korea Institute of Ceramic Engineering and Technology)
1Hynix Semiconductor
2Department of Metallurgy and Materials Engineering, Hanyang University |
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| ABSTRACT |
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A conversion layer of SiC was fabricated on the graphite substrate by a chemical vapor reaction method in order to enhance the oxidation resistance of graphite. The effect of boron carbide containing powder bed on the morphology of SiC conversion layer was investigated during the chemical vapor reaction of graphite with the reactive silicon-source at $1650^{circ}C;and;1700^{circ}C$ for 1 h. The presence of boron species enhanced the conversion of graphite into SiC, and altered the morphology of the conversion layer significantly as well. A continuous and thick SiC conversion layer was formed only when the boron source was used with the other silicon compounds. The boron is deemed to increase the diffusion of SiOx in SiC/C system. |
| Key words:
CVR, Chemical Vapor Reaction, Graphite, SiC coating, Boron carbide doping |
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