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J. Korean Ceram. Soc. > Volume 44(8); 2007 > Article
Journal of the Korean Ceramic Society 2007;44(8): 403.
doi: https://doi.org/10.4191/kcers.2007.44.8.403
The Microstructure and Ferroelectric Properties of Ce-Doped Bi4Ti3O12 Thin Films Fabricated by Liquid Delivery MOCVD
Won-Tae Park, Dong-Kyun Kang, Byong-Ho Kim
Department of Materials Science and Engineering, Korea University
Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.
Key words: Ce-doped $Bi_4Ti_3O_{12}$, Polycrystalline, Randomly oriented, Fatigue-free
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