| Synthesis and Characterization of One-Dimensional GaN Nanostructures Prepared via Halide Vapor-Phase Epitaxy |
| Yun-Ki Byeun, Do-Mun Choi, Kyong-Sop Han1, Sung-Churl Choi |
Department of Ceramic Engineering, Hanyang University
1Korea Institute of Science and Technology |
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| ABSTRACT |
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High-quality one-dimensional GaN nanorods and nanowires were synthesized on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffraction, scanning and transmission electron microscopy, and photoluminescence techniques. Full substrate coverage of densely packed, uniform, straight and aligned one-dimensional GaN nanowires with a diameter of 80nm were grown at $700{sim}900^{circ}C$. The X-ray diffraction patterns, transmission electron microscopic image, and selective area electron diffraction patterns indicate that the one-dimensional GaN nanostructures are a pure single crystalline and preferentially oriented in the [001] direction. We observed high optical quality of GaN nanowires by photoluminescence analysis. |
| Key words:
GaN, Single crystalline, One-dimensional, Nanostructure, Photoluminescence |
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