| Al Doped ZnO 박막의 열처리에 따른 태양전지용 투명전도막 특성 |
| 김봉석, 김응권, 김용성1 |
성균관대학교 전자전기 및 컴퓨터공학과
1성균관대학교 정보통신용 신기능성 소재 및 공정연구센터 |
| Properties of TCO Fabricated with Annealing Temperature of Al Doped ZnO Film for Solar Cell Application |
| Bong-Seok Kim, Eung-Kwon Kim, Young-Sung Kim1 |
Department of Information and Communication, Sungkyunkwan University
1Advanced Material Process of Information Technology, Sungkyunkwan University |
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| ABSTRACT |
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The annealing temperature effect of transparent conducting oxide film grown on glass substrate for solar cell application was studied in this paper. Using pulsed DC magnetron sputtering with 1 at% Al-doped ZnO target, TCO films were deposited on coming 7059 glass at room temperature. Al:ZnO thin films were annealed at 200, 400, Al $600^{circ}C$ for 10 min and annealing resulted in lower biaxial compressive stress of about 1GPa and increased average crystallite size in all films. The as-grown film shows the resistivity of $1{times}10^{-2}{Omega}{cdot}cm$ and transmittance under 80%, whereas the electrical and optical properties of film annealed at $400^{circ}C$ are enhanced up to $5{times}10^{-4}{Omega}{cdot}cm$ and 85%, respectively. |
| Key words:
Al doped ZnO, Annealing temperature, Solar cell, TCO |
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