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J. Korean Ceram. Soc. > Volume 43(6); 2006 > Article
Journal of the Korean Ceramic Society 2006;43(6): 327.
doi: https://doi.org/10.4191/kcers.2006.43.6.327
Processing of Silica-Bonded Silicon Carbide Ceramics
Yong-Seong Chun, Young-Wook Kim
Department of Materials Science and Engineering, The University of Seoul
The effect of the processing parameters on the sintered density and strength of silica-bonded SiC (SBSC) ceramics was investigated for three types of batches with different particle sizes. The SBSC ceramics were fabricated by an oxidation-bonding process. The process involves the sintering of powder compacts in air so that the SiC particles bond to each other by oxidation-derived $SiO_2$ glass or cristobalite. A finding of this study was that a higher flexural strength was obtained when the starting powder was smaller. When a ${sim}0.3_{-{mu}m}$ SiC powder was used as a starting powder, a high strength of $257{pm}42;MPa$ was achieved at a relative density of ${sim}80%$.
Key words: Silicon carbide, Silica-bonded silicon carbide, Processing, Strength
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