| Al과 Ni를 이용한 비정질 실리콘의 결정화 거동 |
| 권순규, 최균, 김병익, 황진하1 |
요업기술원
1홍익대학교 신소재공학과 |
| Crystallization behavior of Amorphous Silicon with Al and Ni |
| Soon-Gyu Kwon, Kyoon Choi, Byung-Ik Kim, Jin-Ha Hwang1 |
Korea Institute of Ceramic Engineering and Technology
1Department of Material Science and Engineering, Hongik University |
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| ABSTRACT |
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Metal-Induced Crystallization (MIC) of amorphous silicon (a-Si) using aluminum and nickel as catalysts were performed with a variation of metal thickness and temperature. Raman results showed that the crystallization of a-Si depended on the thickness of aluminum while not on nickel. Nickel that forms silicide nodules during annealing simply catalyzed the formation of crystalline silicon (c-Si) while aluminum was consumed and transferred during MIC, which resulted in more complex microstructural characteristics. Crystalline silicons after NIC had elongated shape with a twin along the long axis. Morphological change after Aluminum-Induced Crystallization (AIC) showed more equiaxial grains. The nucleation and growth mechanism of AIC was discussed. |
| Key words:
MIC, AIC, Metal-induced, Crystallization |
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