| LED용 Ba2+ Co-Doped Sr2SiO4:Eu 황색 형광체의 발광특성 |
| 최경재, 박정규, 김경남, 김창해, 김호건1 |
한국화학연구소 화학소재연구부
1한양대학교 응용화학과 |
| Luminescence Characteristics of Ba2+ Co-Doped Sr2SiO4:Eu Yellow Phosphor for Light Emitting Diodes |
| Kyoung-Jae Choi, Joung-Kyu Park, Kyung-Nam Kim, Chang-Hae Kim, Ho-Kun Kim1 |
Advanced Materials Division, Korea Research Institute of Chemical Technology
1Department of Applied Chemistry, Hanyang University |
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| ABSTRACT |
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We have synthesized a $Eu^{2+}-activated;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488. |
| Key words:
Phosphor, LED(Light Emitting Diode), PL, UV yellow LED lamp |
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