| FBAR용 ZnO 박막의 열처리 온도변화에 따른 미세조직 및 전기적 특성 |
| 김봉석, 강영훈, 조유혁, 김응권1, 이종주1, 김용성 |
성균관대학교 정보통신용 신기능성 소재 및 공정연구센터
1성균관대학교 전자 전기 및 컴퓨터공학과 |
| Microstructure and Electrical Properties of ZnO Thin Film for FBAR with Annealing Temperature |
| Bong-Seok Kim, Young-Hun Kang, Yu-Hyuk Cho, Eung-Kwon Kim1, Jong-Joo Lee1, Young-Sung Kim |
Advanced Material Process of Information Technology, Sungkyunkwan University
1Department of Information and Communication, Sungkyunkwan University |
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| ABSTRACT |
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In this paper, we prepared high-quality ZnO thin films for application of FBAR (Film Bulk Acoustic Resonator) by using pulse DC magnetron sputtering. To prevent the formation of low dielectric layers between metal and piezoelectric layer, Ru film of 30 nm thickness was used as a buffer layer. In addition we investigated the influence of annealing condition with various temperatures. As the annealing temperature increased, the crystalline orientation with the preference of (002) c-axis and resistance properties improved. The single resonator which was fabricated at $500^{circ}C$ exhibited the resonance frequency and the return loss 0.99 GHz and 15 dB, respectively. This work demonstrates potential feasibility for the use of thin film Ru buffer layers and the optimization of annealing condition. |
| Key words:
FBAR, ZnO thin film, Ru buffer layer, Pulse DC magnetron sputter |
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