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J. Korean Ceram. Soc. > Volume 42(7); 2005 > Article
Journal of the Korean Ceramic Society 2005;42(7): 455.
doi: https://doi.org/10.4191/kcers.2005.42.7.455
Electrical Properties of DC Sputtered Titanium Nitride Films with Different Processing Conditions and Substrates
Yen Jin, Young-Gu Kim, Jong-Ho Kim, Do-Kyung Kim
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology
ABSTRACT
Deposition of TiN$_{x}$ film was conducted with a DC sputtering technique. The effect of the processing parameters such as substrate temperature, deposition time, working pressure, bias power, and volumetric flowing rate ratio of Ar to N$_{2}$ gas on the resistivity of TiN$_{x}$ film was systematically investigated. Three kinds of substrates, soda-lime glass, (100) Si wafer, and 111m thermally grown (111) SiO$_{2}$ wafer were used to explore the effect of substrate. The phase of TiN$_{x}$ film was analyzed by XRD peak pattern and deposition rate was determined by measuring the thickness of TiNx film through SEM cross-sectional view. Resistance was obtained by 4 point probe method as a function of processing parameters and types of substrates. Finally, optimum condition for synthesizing TiN$_{x}$ film having lowest resistivity was discussed.
Key words: TiN films, Ceramic coating, DC sputtering, Resistivity
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