J. Korean Ceram. Soc. > Volume 42(4); 2005 > Article
 Journal of the Korean Ceramic Society 2005;42(4): 219. doi: https://doi.org/10.4191/kcers.2005.42.4.219
 Fabrication of Nd-Substituted Bi4Ti3O12 Thin Films by Metal Organic Chemical Vapor Deposition and Their Ferroelectrical Characterization Hyoeng-Ki Kim, Dong-Kyun Kang, Byong-Ho Kim Department of Materials Science and Engineering, Korea University ABSTRACT A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNdT) thin films were prepared on $Pt(111)/TiO_2/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_{3}$, $Nd(TMHD)_{3}$ and $Ti(O^iPr)_{2}(TMHD)_{2}$ were used as the precursors and were dissolved in n-butyl acetate. The BNdT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNdT thin film was $31.67;{mu}C/cm^{2}$ at an applied voltage of 5 V. Key words: BNdT, LDS-MOCVD, FeRAM, Ferroelectrics, Thin film
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