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J. Korean Ceram. Soc. > Volume 42(3); 2005 > Article
Journal of the Korean Ceramic Society 2005;42(3): 150.
doi: https://doi.org/10.4191/kcers.2005.42.3.150
Electrical Properties of Sol-Gel Derived Ferroelectric Bi3.35Sm0.65Ti3O12 Thin Films
Dong-Kyun Kang, Tae-Jin Cho, Byong-Ho Kim
Department of Materials Science and Engineering, Korea University
Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_{3}O_{12}(BSmT)$ thin films were synthesized by sol-gel process. In this experiments, $Bi(TMHD)_{3},;Sm_{5}(O^{i}Pr)_{13},;Ti(O^{i}Pr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. The BSmT thin films were deposited on the Pt/TiO/SiO/Si substrates by spin-coating. Thereafter, the thin films with the thickness of 240 nm were annealed from 600 to $720^{circ}C$ in oxygen atmosphere for 1 h, and post-annealed in oxygen atmosphere for 1 h after deposition of Pt electrode to enhance the electrical properties. To investigate the effects of Sm-substitution in the BTO thin films, the BTO and BSmT thin films were prepared, respectively. The remanent polarization and coercive voltage of the BSmT thin films annealed at $720^{circ}C$ were $19.48{mu}C/cm^2$ and 3.40 V, respectively.
Key words: BSmT, BTO, FRAM, Sol-gel, Spin-coating
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