| Nonvolatile Semiconductor Memories Using BT-Based Ferroelectric Films |
| Bee-Lyong Yang, Suk-Kyoung Hong1 |
Kumoh National Institute of Technology, Department of Materials Science and Engineering
1Memory R ＆ D Division, FeRAM Device Team, Hynix Semiconductor |
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| ABSTRACT |
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Report ferroelectric memories based on 0.35$mutextrm{m}$ CMOS technology ensuring ten-year retention and imprint at 175$^{circ}C$. This excellent reliability resulted from newly developed BT-based ferroelectric films with superior reliability performance at high temperatures, and also resulted from robust integration schemes free from ferroelectric degradation due to process impurities such as moisture and hydrogen. The superior reliabilities at high temperature of ferroelectric memories using BT-based films are due to the random orientation by special bake treatments. |
| Key words:
Ferroelectric, BT, Memory, Orientation, Reliability |
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