| Transparent Conducting Zinc-Indium Oxides Thin Films by an Electron Beam Evaporation Method |
| Choon-Ho Lee, Sun-Il Kim |
| Department of Materials Engineering, College of Engineering, Keimyung University |
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| ABSTRACT |
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ZnO-In$_2$O$_3$ films were fabricated on Corning 1737 glass substrate by an electron beam evaporation technique and their characteristics were investigated. The composition of ZnO-In$_2$O$_3$ films had a marked effect on the electrical properties of the films. The ZnO-In$_2$O$_3$ films showed superior transparent-conducting characteristics with increase of Zn content. The resistivity and carrier concentration of the film having Zn content of 45 at% are 4.45${times}$10$^{-3}$ cm and 3.1${times}$10$^{19}$ cm$^{-3}$ , respectively. Also, the transmittance was higher than 80% throughout the visible range. The average roughness of the film was 14.6 $AA$ in terms of root mean square. |
| Key words:
$ZnO-In_2$$O_3$ film, Electron beam evaporation, Resistivity, Carrier concentration, Transmittance |
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