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J. Korean Ceram. Soc. > Volume 41(2); 2004 > Article
Journal of the Korean Ceramic Society 2004;41(2): 136.
doi: https://doi.org/10.4191/kcers.2004.41.2.136
예열 온도 변화에 따른 Sol-Gel 법에 의해 제작된 ZnO 박막의 물리적 특성 연구
김익주, 한호철1, 이충선2, 송용진2, 태원필3, 서수정1, 김용성1
LG 생산기술원
1성균관대학교 정보통신용 신기능성 소재 및 공정연구센터
2아주대학교 물리학과
3인하대학교 소재연구소
Physical Properties of ZnO Thin Films Grown by Sol-Gel Process with Different Preheating Temperatures
A homogeneous and stable ZnO sol was prepared by dissolving the zinc acetate dihydrate(Zn(CH$_3$COO)$_2$$.$2H$_2$O) in solution of isopropanol((CH$_3$)$_2$$.$CHOH) and monoethanolamine(MEA:H$_2$NCH$_2$CH$_2$OH). ZnO thin films were prepared by sol-gel spin-coating method and investigated for c-axis preferred orientation and physical properties with preheating temperature. The c-axis growth had a difference as increaing preheating temperature. ZnO thin film preheated at 275$^{circ}C$ and post-heated at 650$^{circ}C$ was highly oriented along the (002) plane. After preheating at 200∼300$^{circ}C$ and post-heating at 650$^{circ}C$, the transmittance of ZnO thin films by UV-vis. measurement was over 85% in visible range and exhibited absorption edges at about 370 nm. The optical band gap energy was obtained about 3.22 eV, The photoluminescence emission characteristics of ZnO thin film preheated at 275$^{circ}C$ and post-heated at 650$^{circ}C$ was found to orange emission(620 nm, 2.0 eV) by PL measurement, which revealed the possibility for application of inorganic photoluminescence device.
Key words: Zinc oxide, Sol-gel process, Thin films, Photoluminescence
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