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J. Korean Ceram. Soc. > Volume 41(2); 2004 > Article
Journal of the Korean Ceramic Society 2004;41(2): 170.
doi: https://doi.org/10.4191/kcers.2004.41.2.170
졸-겔법에 의한 (YbxY1-x)MnO3강유전체 박막제조
강승구, 이기호
경기대학교 첨단산업공학부
Preparation of Ferroelectric (YbxY1-x)MnO3 Thin Film by Sol-Gel Method
The ferroelectric (Y $b_{x}$ $Y_{1-x}$)Mn $O_3$ thin films were fabricated by sol-gel method using Y-acetate, Yb-acetate, and Mn-acetate as raw materials. The stable (Y $b_{x}$ $Y_{1-x}$)Mn $O_3$ precursor solution (sol) was prepared through the reflux process with acetylaceton as a catalyst and coated on Si(100) substrate by spin coating. The heat treatment temperature and, Rw ($H_2O$/alkoxide moi ratio) dependence on crystallinity of thin films were studied. The lowest temperature for obtaining YbMn $O_3$phase and the optimum heat-treatment conditions were proved as at 7$50^{circ}C$ and 80$0^{circ}C$, respectively. The hexagonal YbMn $O_3$with c-axis preferred orientation could be obtained at Rw=1 condition. The remanent polarization for the thin films of x=0 or 1 was about 200 nC/㎤ while, for the specimens ot 0< x< 1, were 50∼100 nC/$textrm{cm}^2$.EX>.
Key words: FRAM, Sol-gel, Ferroelectric, $ReMnO_3$, Thin film
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