| Al4C3 첨가 α-SiC의 열전변환특성 |
| 박영석, 배철훈 |
| 인천대학교 신소재공학과 |
| Thermoelectric Properties of Al4C3-doped α-SiC |
|
|
|
|
|
|
|
| ABSTRACT |
|
The effect of A1$_4$C$_3$ additive on the thermoelectric properties of SiC ceramics were studied. Porous SiC ceramics with 47∼59% relative density were fabricated by sintering the pressed $alpha$-SiC powder compacts with A1$_4$C$_3$at 2100∼220$0^{circ}C$ for 3 h in Ar atmosphere. Crystalline phases of the sintered bodies were identified by powder X-Ray Diffraction (XRD) and their microstructures were observed with a Scanning Electron Microscope (SEM). In the case of A1$_4$C$_3$ addition, the phase transformation of 6H-SiC to 4H-SiC could be observed during sintering. The Seebeck coefficient and electrical conductivity were measured at 550∼95$0^{circ}C$ in Ar atmosphere. In the case of undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder and electrical conductivity increased as increasing sintering temperature. Electrical conductivity of A1$_4$C$_3$doped specimen is larger than that of undoped specimen under the same condition, which might be due to the reverse phase transformation and increasing of carrier density. And the Seebeck coefficient of A1$_4$C$_3$ doped specimen is also larger than that of undoped specimen. The density of specimen, the amount of addition and sintering atmosphere had significant effects on the thermoelectric property. |
| Key words:
$\alpha$-SiC, $Al_4$$C_3$-doped, Microstructure, Electrical conductivity, Seebeck coefficient, Power factor |
|
|
|
PDF Links
Full text via DOI
Download Citation 
