| Room-temperature Preparation of Al2O3 Thick Films by Aerosol Deposition Method for Integrated RE Modules |
| Takaaki Tsurumi, Song-Min Nam, Naoko Mori, Hirofumi Kakemoto, Satoshi Wada, Jun Akedo1 |
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology
1National Institute of Advanced Industrial Science and Technology(AIST) |
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| ABSTRACT |
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The Aerosol Deposition (AD) process will be proposed as a new fabrication technology for the integrated RF modules. $alpha$-A1$_2$O$_3$ thick films were successfully grown on glass and Al substrates at room temperature by the AD process. Relative dielectric permittivity and loss tangent of the $Al_2$O$_3$ thick films on Al showed 9.5 and 0.005, respectively. To form microstrip lines on aerosol-deposited A1903 thick films, copper electroplating and lithography processes were employed, and the square-type cross section with sharp edges could be obtained. Low-pass LC filters with 10 GHz cutoff frequency were simulated by an electromagnetic analysis, exhibiting the validity of the AD process as a fabrication technology f3r integrated RF modules. |
| Key words:
Aerosol deposition, Integrated RF module, $Al_2$$O_3$ thick films, Integral substrate |
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