| ZrO2완충층의 후열처리 조건이 Pt/SrBi2Ta2O9/ZrO2/Si 구조의 전기적 특성에 미치는 영향 |
| 정우석, 박철호, 손영국 |
| 부산대학교 무기재료공학과 |
| The Heat Treatment Effect of ZrO2 Buffer Layer on the Electrical Properties of Pt/SrBi2Ta2O9/ZrO2/Si Structure |
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| ABSTRACT |
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$SrBi_2Ta_2O_9(SBT)$and$ZrO_2$thin films for MFIS structure(Metal-Ferroelectric-Insulator-Semiconductor) were deposited by RF magnetron sputtering method. In order to investigate the effect of heat treatment of insulator layers and MFIS structure, the insulator layers were heat treated from $550^{circ}C;to; 850^{circ}C$in conventional furnace or RTA furnace under$O_2$and Ar ambient, respectively. After then, C-V characteristics and leakage current were measured. The capacitor with 20 nm thick $ZrO_2$layer treated at RTA$750^{circ}C;in;O_2$ atmosphere had the largest memory window. The C-V and leakage current characteristics of the$Pt/SBT(260nm)/ZrO_2(20nm)/Si$structure were better than those of$Pt/SBT(260nm)/Si$ structure. These results showed that$ZrO_2$films took a role of buffer layer effectively.ely. |
| Key words:
MFIS structure (Meta1-Ferroelectric-Insulator-Semiconductor), $ZrO_2$ buffer layer, ${SrBi_2}{Ta_2}{O_9}&(SBT), Memory window |
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