실리카 광도파로의 Core층인 Silicon Oxynitride후박의 굴절률 제어 |
김용탁, 조성민, 윤석규, 서용곤1, 임영민1, 윤대호 |
성균관대학교 신소재공학과 1전자부품연구원 광부품연구센터 |
Refractive Index Control of Silicon Oxynitride Thick Films on Core Layer of Silica Optical Waveguide |
|
|
|
|
|
ABSTRACT |
Silicon Oxynitride(SiON) thick films on p-type silicon(100) wafers have obtained by using plasma-enhanced chemical vapor deposition from SiH$_4$ , N$_2$O and N$_2$. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4620 to 1.5312. A high deposition power of 180 W leads to deposition rates of up to 5.92${mu}$m/h. The influence of the deposition condition on the chemical composition was investigated using X-ray photoelectron spectroscopy. After deposition of the SiON thick films, the films were annealed at 1050$^{circ}C$ in a nitrogen atmosphere for 2 h to remove absorption band near 1.5${mu}$m. |
Key words:
PECVD, Silicon oxynitride, Annealing, Silica optical waveguide |
|
|
|