Growth of Bi:YIG Thick Films by Change of PO/Bi<sub>2</sub>O<sub>3</sub> Molar Ratio

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doi:2002.39.6.589

J. Korean Ceram. Soc. > Volume 39(6); 2002 > Article

Journal of the Korean Ceramic Society 2002;39(6): 589.
doi: https://doi.org/10.4191/kcers.2002.39.6.589

PO/Bi₂O₃ 변화에 따른 Bi:YIC 단결정 후박의 성장

윤석규, 김근영, 김용탁, 정현민¹, 임영민², 윤대호

성균관대학교 신소재공학과
¹삼성코닝(주) 연구소 광소자 연구실
²전자부품연구원 광부품연구센터

Growth of Bi:YIG Thick Films by Change of PO/Bi₂O₃ Molar Ratio

ABSTRACT

The single crystalline thick fi1ms of Bi:Y$_3$Fe$_{5}$ $O_{12}$(Bi:YIG) were grown on (GdCa)$_3$(GaMgZr)$_{5}$ $O_{12}$(SGGG) by Liquid Phase Epitaxy (LPE). The changes of lattice mismatch and Bi concentration were investigated in the thick film growth as a function of PO/Bi$_2$ $O_3$ molar ratio, with keeping constant of substrate rotation speed, supercooling and growth time. It was grown that the lattice constant of the garnet single crystalline thick films and Bi content increased with decreasing of PO/Bi$_2$ $O_3$ molar ratio. Bi concentration decreased with increasing of the film thickness.

Key words: Garnet, Bi:YIG, LPE, PO/$Bi_2$$O_3$, SGGG