| 마그네트론 스퍼터링에 의해 제작한 Gallium-doped ZnO 박막에 있어서 잔류 H2O 분압의 영향 |
| 송풍근, 권용준1, 차재민1, 이병철1, 류봉기1, 김광호1 |
아오야마 가꾸인 대학 이공학부 화학과
1부산대학교 무기재료공학과 |
| The Effect of Residual H2Pressure on Gallium-doped ZnO Films Deposited by Magnetron Sputtering |
| Pung-Keun Song, Young-Jun Kwon1, Jae-Min Cha1, Byung-Chul Lee1, Bong-Ki Ryu1, Kwang-Ho Kim1 |
Department of Chemistry, College of Science and Engineering, Aoyama Gakuin University
1Department of Inorganic Materials Engineering, Pusan National University |
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| ABSTRACT |
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Gallium doped Zinc Oxide(GZO) films were deposited by dc magnetron sputtering using a GZO ceramic target at various conditions such as substrate temperature (RT, 400), residual water pressure ($P_{H_2O}$; 1.61${times}10^{-4}∼2.2{times}10^{-3}$ Pa), introduction of $H_2$ gas (8.5%) and different magnetic field strengths(250, 1000G). GZO films deposited without substrate heating showed clear degradation in film crystallinity and electrical properties with increasing $P_{H_2O}$. The resistivity increased from 3.0${times}10^{-3}$ to 3.1${times}10^{-2}{Omega}㎝$ and the grain size of the films decreased from 24 to 3 nm when PH2O was increased from 1.61${times}10^{-4}$ to 2.2${times}10^{-3}$ Pa. However, degradation in electrical properties with increasing $P_{H_2O}$ was not observed for the films deposited with introduction of 8.5% $H_2$. When magnetic field strength of the cathode increased from 250G to 1000G, crystallinity and electrical properties of GZO films improved remarkably about all the $P_{H_2O}$. This result could be attributed to the decrease in film damage caused by the decrease in plasma impedance. |
| Key words:
Residual water pressure, Gallium-doped zine oxide, Magnetron sputtering, Transparent conductive oxide |
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