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J. Korean Ceram. Soc. > Volume 39(10); 2002 > Article
Journal of the Korean Ceramic Society 2002;39(10): 928.
doi: https://doi.org/10.4191/kcers.2002.39.10.928
마그네트론 스퍼터링에 의해 제작한 Gallium-doped ZnO 박막에 있어서 잔류 H2O 분압의 영향
송풍근, 권용준1, 차재민1, 이병철1, 류봉기1, 김광호1
아오야마 가꾸인 대학 이공학부 화학과
1부산대학교 무기재료공학과
The Effect of Residual H2Pressure on Gallium-doped ZnO Films Deposited by Magnetron Sputtering
Pung-Keun Song, Young-Jun Kwon1, Jae-Min Cha1, Byung-Chul Lee1, Bong-Ki Ryu1, Kwang-Ho Kim1
Department of Chemistry, College of Science and Engineering, Aoyama Gakuin University
1Department of Inorganic Materials Engineering, Pusan National University
Gallium doped Zinc Oxide(GZO) films were deposited by dc magnetron sputtering using a GZO ceramic target at various conditions such as substrate temperature (RT, 400), residual water pressure ($P_{H_2O}$; 1.61${times}10^{-4}∼2.2{times}10^{-3}$ Pa), introduction of $H_2$ gas (8.5%) and different magnetic field strengths(250, 1000G). GZO films deposited without substrate heating showed clear degradation in film crystallinity and electrical properties with increasing $P_{H_2O}$. The resistivity increased from 3.0${times}10^{-3}$ to 3.1${times}10^{-2}{Omega}㎝$ and the grain size of the films decreased from 24 to 3 nm when PH2O was increased from 1.61${times}10^{-4}$ to 2.2${times}10^{-3}$ Pa. However, degradation in electrical properties with increasing $P_{H_2O}$ was not observed for the films deposited with introduction of 8.5% $H_2$. When magnetic field strength of the cathode increased from 250G to 1000G, crystallinity and electrical properties of GZO films improved remarkably about all the $P_{H_2O}$. This result could be attributed to the decrease in film damage caused by the decrease in plasma impedance.
Key words: Residual water pressure, Gallium-doped zine oxide, Magnetron sputtering, Transparent conductive oxide
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