| Ne, Ar, Kr 가스를 사용하여 제작한 스퍼터 Gallium 도프 ZnO 박막의 전기적 특성 |
| 송풍근, 류봉기1, 김광호1 |
아오야마 가꾸인 대학 이공학부 화학과
1부산대학교 무기재료공학과 |
| Electrical Properties of Sputtered Gallium-doped Zinc Oxide Films Deposited Using Ne, Ar, or Kr Gas |
| Pung-Keun Song, Bong-Ki Ryu1, Kwang-Ho Kim1 |
Department of Chemistry, College of Science and Engineering, Aoyama Gakuin University
1Department of Inorganic Materials Engineering, Pusan National University |
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| ABSTRACT |
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Gallium-doped ZnO (GZO) films were deposited on soda-lime glass substrate without heating using Ne, Ar, or Kr gas. Electrical properties of GZO films deposited at various total gas pressures were investigated for the film positions corresponding to the erosion region (region B) and outside the erosion region (region A) of the target. Region B showed high resistivity, which was attributed to the decrease in carrier density and Hall mobility, compared to region A. GZO films deposited using Ne gas showed the degradation in resistivity and crystallinity, whereas, GZO films deposited using Kr gas showed the improvement in resistivity and crystallinity. This degradation in film properties could be attributed to the film damage caused by the bombardment of high-energy particles. Especially, the energies of recoiled neutral atoms ($Ne^0,;Ar^0,;Kr^0$) calculated by Monte Carlo simulation corresponded to experimental results. |
| Key words:
Gallium doped zinc oxide, DC magnetron sputtering, Transparent conductive oxide, Recoiled neutral atoms, Electrical properties |
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