J. Korean Ceram. Soc. > Volume 39(5); 2002 > Article
 Journal of the Korean Ceramic Society 2002;39(5): 517. doi: https://doi.org/10.4191/kcers.2002.39.5.517
 PVD 공정을 이용한 Si 양자점 형성 전산모사 김윤성, 정용재 한양대학교 세라믹공학과 The Simulation of Si quantum Dot Formation in PVD Process Yun-Sung Kim, Yong-Chae Chung Department of Ceramic Engineering, Hanyang University ABSTRACT In this study, the effect of the processing parameters in PVD process on the size and the distribution of deposited Si quantum dots was quantitatively investigated by computational simulation utilizing Monte Carlo method. The processing parameters, substrate temperature, deposition time, gas pressure and target-substrate distance were selected as variables since those parameters are often selected as variables in PVD experiments. It is predicted that the density of $1{times}10^{12}cm^{-2}$ Si quantum dots can be deposited on the substrate when the deposition rate is 0.05 nm/sec at the substrate temperature of 490${circ}$, deposition time of 7 sec, gas pressure of 3 mTorr and target-substrate distance of 8 cm. Key words: Monte Carlo simulation, PVD process, Quantum dot formation
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