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J. Korean Ceram. Soc. > Volume 39(1); 2002 > Article
Journal of the Korean Ceramic Society 2002;39(1): 21.
doi: https://doi.org/10.4191/kcers.2002.39.1.021
Effect of Abnormal Grain Growth and Heat Treatment on Electrical Properties of Semiconducting BaTiO3Ceramics
Joon-Hyung Lee, Sang-Hee Cho
Department of Inorganic Materials Engineering, Kyungpook National University
Effect of abnormal grain growth and heat treatment time on the electrical properties of donor-doped semiconductive BaTiO$_3$ceramics was examined. La-doped BaTiO$_3$ceramics was sintered at 134$0^{circ}C$ for different times from 10 to 600 min in order to change the volume fraction of the abnormal grains in samples. As a result, samples with different volume fraction of abnormal grain growth from 22 to 100% were prepared. The samples were annealed at 120$0^{circ}C$ for various times. The resistivity of the sam-ples at room and above Curie temperature was examined. The complex impedance measurement as functions of the volume fraction of abnormal grains and annealing time was conducted. Separation of complex impedance semicircle was observed in a sample in which abnormal and fine grains coexist. The results are discussed from a viewpoint of microstructure-property relationship.ḊЀ㜱㈻က䅲琠☠牥捲敡瑩潮
Key words: Abnormal, grain growth, Semicondueting, $BaTiO_3$, Heat treatment
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