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Journal of the Korean Ceramic Society 2001;38(12): 1150. |
실리카 광도파로용 SiON 후막 특성에서 RF Power와 $SiH_4$/($N_2$O+$N_2$) Ratio가 미치는 영향 |
김용탁, 조성민, 서용곤1, 임영민1, 윤대호 |
성균관대학교 신소재공학과 1전자부품연구원 광부품연구센터 |
The Effect of RF Power and $SiH_4$/($N_2$O+$N_2$) Ratio in Properties of SiON Thick Film for Silica Optical Waveguide |
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ABSTRACT |
Silicon oxynitride (SiON) thick films using the core layer of silica optical waveguide have been deposited on Si wafer by PECVD at low temperature (32$0^{circ}C$) were obtained by decomposition of appropriate mixture of (SiH$_4$+$N_2$O+$N_2$) gaseous mixtures under RF power and SiH$_4$/($N_2$O+$N_2$) ratio deposition condition. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4663 to 1.5496. A high SiH$_4$/($N_2$O+$N_2$) of 0.33 and deposition power of 150 W leads to deposition rates of up to 8.67 ${mu}{textrm}{m}$/h. With decreasing SiH$_4$/($N_2$O+$N_2$) ratio, the SiON layer become smooth from 41$AA$ to 6$AA$. |
Key words:
Silica waveguide, PECVD, Silicon oxynitride, Planar Lightwave Circuit(PLC) |
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